PART |
Description |
Maker |
K9S3208V0ANBSP K9S3208V0A-SSB0 K9S3208V0A |
4M x 8Bit SmartMedia Card Data Sheet 4M x 8 bit SmartMedia Card
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9S2808V0A |
16M x 8Bit SmartMedia Card Data Sheet
|
Samsung Electronic
|
HA12133MP |
PRE, REC, eguallzer IC for R-DAT PRE,REC,EQUALLZER IC FOR R-DAT
|
Hitachi Semiconductor
|
A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only 70ns 20mA 256K x 8bit CMOS 5.0V-only 100ns 20mA 256K x 8bit CMOS 5.0V-only 120ns 20mA 256K x 8bit CMOS 5.0V-only 150ns 20mA 256K x 8bit CMOS 5.0V-only 90ns 20mA 256K x 8bit CMOS 5.0V-only 55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
KMM372F3200BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
HY5756820C HY57V56820CLT-P HY57V56820CT-H HY57V568 |
4 Banks x 8M x 8Bit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 SDRAM - 256Mb
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
TH58512FT |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
ON2175 |
Reflective photosensor Tape end sensor for DAT
|
Panasonic Corporation
|
IBM13Q32734BCA-10Y |
x72 SDRAM Module 32M x 72 Registered SDRAM Module(32M x 72 200脚寄存同步动态RAM模块) 32M × 72配置注册内存模块2M × 72配置200脚寄存同步动态内存模块)
|
International Business Machines, Corp.
|
2-1437720-7 |
T01 CABLE CONNECTION MALE-FEMALE PLUG 4 POS. 1-32m T01 VERBINDUNGSKABEL STIFT-BUCHSE 4 POL. 1-32m
|
Tyco Electronics
|